SOMNATH CHATTOPADHYAY Ph.D, AVH Fellow
" Research Makes The Difference "
Microelectronic Labaratory for Electonic Devices and Photovoltaic Renewable Energy Devices
MISSION OF MICROELECTRONICS ENGINEERING LABORATORY
The future mission of the Microelectronics Engineering Laboratory (MEL) at the California State University Northridge, Northridge is to perform education and research development in area of electronic and optoelectronic devices. The MEL will assist:
- To provide opportunities to perform the research in discrete electronic and optoelectronic devices for academic as well as industrial users.
- To provide the training and experience for undergraduate and graduate students to successfully achieve a rewarding career in microelectronics engineering.
- To strongly contribute to advancements in microelectronics engineering for electronic and optoelectronic devices development.
This enterprising effort includes the state-of the-art on developing process technology and device and process simulation for silicon based electronic and optoelectronic devices based on fundamental research. In order to accomplish that the MEL CSUN has built the facility and collaborated with the University of Texas Austin and Skyworks Solution Inc., CA.
The MEL facility is capable to fabricate all kind of silicon based discrete devices such as rectifying diode, IMPATT diode, Avalanche photodiode, switching diode, bipolar and MOS devices, MESFET, OPFET and other devices.
The Microelectronics Engineering Laboratory at the California State University Northridge at Northridge is a research laboratory funded by the US Department of Defense.
CSUN faculty is actively involved in developing fundamental research on device modeling and process modeling for high speed and high frequency devices, low noise device and high power devices and processing technologies, including:
- Low dark current Schottky diode photodetectors with transparent contacts.
- GaAs MESFET for high speed operation.
- High power and high frequency SiC MESFET
- Avalanche photodetector
- Solar blind photodetector.
- Devices for bio-medical application
Semiconductor Processing Cleanrooms for Microfabrication
This laboratory includes 1500 square feet of class 100, and class 10000 areas. There are facilities to process and fabricate the MOS, bipolar, FETs, optoelectronics, and photovoltaics devices. The processing equipment include a diffusion furnace, nano-cal ellipsometer; DekTak profilomiter; Karl Suss MA56 mask aligner; Nano-Calc Thinfilm Spectroscopic Refelectometer, four Cooke Vacuum sputtering systems, Kurt J. Lesker PVD -75 system, annealing, oxidation and diffusion furnaces; Kenworth probe station with Hewlett-Packard 4145; 4-point probe; wet chemical clean benches, etc. In addition to ECE faculty, staff and students, the facilities are available to researchers from Physics, Material Science, Chemical Engineering, Chemistry, Mechanical Engineering, and from outside California State University Northridge. Arrangements for access by non-lab personnel for foundry service facilities can be made by contacting Cleanroom Manager Charles B. Overton.
Members of Clean Room
StaffMembers / Visiting Scientists – Charles B.Overton, Dr. Subba Kodigala, Dr. Dhruvajyoti Roy
Students – Karthik Vishwanadh, Rahul Reddy Kambalapally, Avinash Chowdary, Sruthi Nair, Sarah, Divakar Vedati, Narendra Varma Uddaraju
Current Position
Faculty in the Department of Electrical and Computer
Engineering
Coordinator of Microelectronics Laboratory
Principal Investigator of Research Project funded by US Department of Defense
Education
Ph.D. Degree in Electronics Engineering earned from the Department of Electronics Engineering, Institute of Technology, Banaras Hindu University in 1989
M. Tech. (Master of Technology) Post-graduate degree in Microelectronics Engineering earned from the Department of Electronics Engineering, Institute of Technology, Banaras Hindu University in 1984.
B.E. (Bachelor of Engineering) Graduate degree in electronics engineering earned from M.M.M. Engineering College,
University of Gorakhpur in 1981.
Previous Positions
Faculty in the Department of Electrical and Computer Engineering, California State University Fresno, 2002-2005.
Process Engineer in the International Radiation Detectors,Torrance, 2000-2001
Team leader of fabrication group for developing IMPATT diode at the Center for Advanced Study in Radio-Physicsand Electronics, University of Calcutta, 1999-2000.
General Manager and Head of the Wafer Fab for production and research and development of semiconductor devices at USHA India Ltd. India, 1996-1998.
Research Scientist at the Institute of High Frequency Technique, TH-Darmstadt University, Germany, awarded by the Alexander von Humboldt Foundation, 1993-1995.
Ad-hoc faculty and research fellow at the Department of Electronics Engineering, Banaras Hindu University, India,1989-1992.
Awards
Fellowship awarded by the Alexander von Humboldt Foundation, Germany, 1993.
Research grant awarded by the US Department of Defense, 2005.
Research grant awarded by the US Department of Defense, 2012.
Research grant awarded by the US Department of Defense, 2012.
ECE 340: Electronics I
Linear, piecewise-linear, and nonlinear models for active devices and their interaction with passive network elements. Characteristics and behavior of operational amplifiers, diodes and transistors. Small signal amplifiers and their analysis at low, midband and high frequencies. 3 hours lecture; one 3-hour lab per week.
Textbook and/or Other Required Material:
- Sedra AS and Smith KC: Microelectronic Circuits, Oxford University Press, 5th edition, 2003, ISBN: 0195142519
- http://www.sedrasmith.com/
- PSPICE, by OrCAD Corporation http://www.orcad.com/
ECE 445:Introduction to Solid State Devices
Electric and magnetic properties of materials are examined with emphasis on engineering applications. Typical devices which are considered include ohmic and non-ohmic contacts, voltaic cells, PN junction devices, ferroelectric energy converters, ferrite devices and integrated circuits.
Textbook and/or Other Required Material:
- Streetman B, and Banerjee S: Solid State Electronic Devices, Prentice Hall, 6th edition, 2005, ISBN: 013149726X
ECE 545: Solid State Devices
In-depth study of semiconductor materials and solid state devices. Energy bands and charge carriers, excess carriers in semiconductors, P-N junctions, bipolar junction transistors (BJTs), field effect transistors (FETs), integrated circuits (IC) will be covered in detail. Practical aspects of dielectric and magnetic devices are also treated.
Textbook and/or Other Required Material:
- Sze SM, and Ng KK: Physics of Semiconductor Devices, Wiley-Interscience, 3rd edition, 2006, ISBN: 0471143235
ECE 546: Very Large Scale Integrated Circuit Design
Survey of VLSI technology and very large scale integrated systems. Problems which occur when ordinary circuits are replicated to involve millions of devices. CMOS technology, design styles up to the point of submission for fabrication. Computerized methods with high density circuits with optimized speed and power consumption. Students perform simple layouts and simulations suitable for extension to a very large scale.
Textbook and/or Other Required Material:
- Baker RJ: CMOS Circuit Design, Layout, and Simulation, Wiley-IEEE Press, 2nd Edition, 2004, ISBN: 047170055X
- http://cmosedu.com/
ECE695DFP: Microelectronics Device Fabrication Principles
Prerequistes: ECE 545 or ECE 445. Fabrication process physics as well as fabrication and characterization systems. This course deals with impurity doping processes such as diffusion, ion implantation and epitaxy techniques, thin film deposition, etching process and photolithographic process, device failure analysis, device yield analysis, software development for process model.
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