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Dr.Somnath Chattopadhyay

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Microelectronics Engr. Laboratory
Ph: (818) - 677-7197, (818)-275-9757
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MISSION OF MICROELECTRONICS ENGINEERING LABORATORY
The future mission of the Microelectronics Engineering Laboratory (MEL) at the California State University Northridge, Northridge is to perform education and research development in area of electronic and optoelectronic devices. The MEL will assist:
- To provide opportunities to perform the research in discrete electronic and optoelectronic devices for academic as well as industrial users.
- To provide the training and experience for undergraduate and graduate students to successfully achieve a rewarding career in microelectronics engineering.
- To strongly contribute to advancements in microelectronics engineering for electronic and optoelectronic devices development.
This enterprising effort includes the state-of the-art on developing process technology and device and process simulation for silicon based electronic and optoelectronic devices based on fundamental research. In order to accomplish that the MEL CSUN has built the facility and collaborated with the University of Texas Austin and Skyworks Solution Inc., CA.
The MEL facility is capable to fabricate all kind of silicon based discrete devices such as rectifying diode, IMPATT diode, Avalanche photodiode, switching diode, bipolar and MOS devices, MESFET, OPFET and other devices.
The Microelectronics Engineering Laboratory at the California State University Northridge at Northridge is a research laboratory funded by the US Department of Defense.
CSUN faculty is actively involved in developing fundamental research on device modeling and process modeling for high speed and high frequency devices, low noise device and high power devices and processing technologies, including:
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Low dark current Schottky diode photodetectors with transparent contacts.
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GaAs MESFET for high speed operation.
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High power and high frequency SiC MESFET
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Avalanche photodetector
- Solar blind photodetector.
- Devices for bio-medical application
| FABRICATION FACILITY:
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The total floor area of microelectronics laboratory is approximately 1500 ft2 with class 100, class 1000 and class 10000 enviorment .
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| Front-end Wafer Processing |
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- Diffusion and Oxidation processes by Thermco diffusion furnace.
- Aluminum and Indium Tin Oxide Film Deposition by Cooke Vaccum Sputtering Units
- Photolithography process by Karl Suss MA56 Mask Aligner
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| Characterization |
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- Parametric analyzer, curve tracer, minority carrier lifetime tester, SEM and Thin film Relectrometry, Augerscope (Material Science), etc..
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| Device Simulation |
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